Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Deposition
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چکیده
منابع مشابه
Effects of doping and annealing on properties of ZnO films grown by atomic layer deposition
Undoped and Al-doped ZnO films were synthesized by atomic layer deposition at 150°C and then annealed at 350°C in different atmospheres. Effects of doping and annealing on the film growth mode and properties were investigated. The undoped film has strong UV emission and weak Zn interstitial emission. Annealing introduces O vacancies, decreases Zn interstitials, and results in weakening and blue...
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Al O films with thicknesses ranging from 30 to 3540 A were grown in a viscous flow reactor using atomic layer deposition 2 3 ̊ (ALD) with trimethylaluminum and water as the reactants. Growth temperatures ranged from 125 to 425 8C. The Al O ALD 2 3 films were deposited successfully on a variety of substrates including Au, Co, Cr, Cu, Mo, Ni, NiFe, NiMn, Pt, PtMn, Si, stainless steel, W, and ZnO. ...
متن کامل(Sn,Al)Ox Films Grown by Atomic Layer Deposition
Tin oxide (SnO2) is a transparent semiconductor with a wide band gap and electrical resistivity as low as 2 10 4 Ω 3 cm and high infrared reflectivity, over 90%. 4 These properties are achieved using n-type doping by substituting fluorine for about 1% of the oxygen. The low electrical resistance and optical transparency in SnO2 are widely used in applications such as solar cells, displays, touc...
متن کاملInterface Between Atomic Layer Deposition Ta2O5 Films and GaAs(100) Surfaces
Ta2O5 films were deposited on GaAs(100) surfaces using thermal atomic layer deposition from pentakis dimethyl amino tantalum (PDMAT) and H2O. The interface between the films and native oxide covered GaAs surfaces has been examined using X-ray photoelectron spectroscopy as a function of film thickness and for deposition temperatures ranging from 200 to 350 °C. Gradual removal of the surface arse...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2019
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-019-2907-0